4/27/2026

THIS is the Biggest Thing Since CGI

 


This video explores the revolutionary technology of Gaussian Splatting, a new 3D capture format that is effectively a photorealistic, real-time-rendering hologram. Wren from the Corridor Crew explains how this technology surpasses older methods like NeRFs (Neural Radiance Fields) by offering better editability and efficiency.

Key takeaways include:

  • What is a Gaussian Splat? Unlike NeRFs, which function as complex mathematical formulas, Gaussian Splats exist in 3D space as a collection of millions of "fuzzy blobs" (Gaussians). Each blob contains data on position, rotation, opacity, and view-dependent color handled by spherical harmonics to achieve photorealism efficiently.
  • The Capture Process: Creating a splat requires high-quality, crisp images with locked settings (shutter speed, white balance) to avoid blur. Wren highlights the efficiency of using a 360-degree drone, specifically the Antigravity A1, to capture entire spaces in a single session, which is significantly faster than using a standard camera.
  • Applications & Creative Potential:
    • Historical Preservation: Scans can preserve locations in 3D space, such as the Inspiration Point landmark that was lost to wildfires.
    • VFX & Animation: Splats can be brought into software like Octane Render for relighting, path tracing, and even physics-based distortions.
    • 4D Gaussian Splats: Through collaboration with 4DV.ai, the video showcases how video data can be turned into dynamic 4D assets where individual points have velocity and time-spans, allowing for infinite frame-rate playback and real-time hologram-style interviews.

Future Outlook: The video suggests that as processing power improves and accessibility increases, Gaussian Splats will likely become the standard for VR, real estate, and digital mapping, effectively bringing the "hologram" future to life.












The Next Chip Breakthrough Is Not a Machine



This video explores the current crisis in semiconductor manufacturing and the innovative chemical solutionDirected Self-Assembly (DSA)—that may save Moore's Law.

The Scaling Crisis 

For decades, microchip performance relied on shrinking transistors. However, as we reach atomic levels, two major problems have emerged:

  • Optical Limits: Light behaves like a wave, and at current nanometer scales, the light source (the "brush") is too wide to draw sharp, accurate patterns .
  • Physics Limits: As transistors get smaller, electrons begin to "tunnel" through barriers, leading to leakage that renders the chip useless.
  • The EUV Struggle: While Extreme Ultraviolet Lithography (EUV) machines ($200 million each) allow us to print at 13.5nm wavelengths using extreme plasma, they are increasingly expensive to run and struggle with photon starvation, causing variations that result in chip failures.

The Chemistry Hack: Directed Self-Assembly.

To move beyond these physical constraints, the industry is looking at Directed Self-Assembly (DSA), a method where materials form their own patterns.

  • Block Copolymers: These are molecules composed of two distinct parts that naturally repel each other but are bound together. When heated, they experience tension and reorganize into perfectly repeating, self-assembled patterns.
  • The Hybrid Approach: Instead of replacing lithography, DSA is used in tandem with EUV. EUV prints a "guiding template," and then the block copolymers fill in the pattern, essentially amplifying the lithographic process.
  • Economic Benefits: By allowing chemistry to "clean up" and define the final features, manufacturers can run EUV machines faster and more efficiently, reducing the cost per wafer.

Industry Outlook

  • Intel's Bet: Intel is uniquely positioned to implement DSA in their upcoming 14A process node (expected around 2027), viewing it as the "cheat code" for scaling.
  • Divergence: While Sony already uses DSA for image sensors, competitors like TSMC and Samsung are currently sticking to brute-force EUV methods, preferring predictability over this complex, new chemical integration.









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